SUD50P10-43-E3【PDF 1/7 页】MOSFET P-CH D-S 100V TO252

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SUD50P10-43

New Product

Vishay Siliconix

P-Channel 100-V (D-S) 175 _ C MOSFET

PRODUCT SUMMARY

FEATURES

D TrenchFET r Power MOSFET

V DS (V)

–100

r DS(on) ( W )

0.043 at V GS = –10 V

I D (A) a

–38

Q g (Typ)

105 nC

RoHS

COMPLIANT

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)

Drain-Source Voltage

Gate-Source Voltage

Parameter

T C = 25 _ C

Symbol

V DS

V GS

Limit

–100

" 20

–38 a

Unit

Continuous Drain Current (T J = 175 _ C)

T C = 70 _ C

T A = 25 _ C

I D

–31.8 a

–9.4 b, c

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

T A = 70 _ C

T C = 25 _ C

T A = 25 _ C

L = 0 0.1 1 mH

I DM

I S

I AS

E AS

–7.8 b, c

–50

–50 a

–6.9 b, c

–40

T C = 25 _ C

136

Maximum Power Dissipation

T C = 70 _ C

T A = 25 _ C

P D

8.3 b, c

T A = 70 _ C

5.8 b, c

Operating Junction and Storage Temperature Range

T J , T stg

–50 to 175

_ C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient b, d

Maximum Junction-to-Case (Drain)

t p 10 sec

Steady State

R thJA

R thJC

0.85

1.1

_ C/W

Notes:

a. Package limited.

b. Surface mounted on 1” x 1” FR4 Board.

c. t = 10 sec.

d. Maximum under steady state conditions is 40 _ C/W.

Document Number: 73445

S–60311—Rev. B, 27-Feb-06

www.vishay.com

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